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IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

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IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

: Large Image : IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFB20N50KPBF

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	6900pcs

Contact Now

Detailed Product Description

Pulsed Drain Current:	80 A	Power Dissipation:	280 W
Linear Derating Factor:	2.2 W/°C	Gate-to-Source Voltage:	± 30 V
Peak Diode Recovery Dv/dt:	6.9 V/ns	Operating Junction And Storage Temperature:	-55 To + 150°C
High Light:	multi emitter transistor , silicon power transistors

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

MMBT4403LT1G	24000	LRC	16+	SOT-23
MMBT5401LT1G	27000	ON	16+	SOT-23
MMBT5550	9000	FSC	08+	SOT-23
MMBT5551LT1G	15000	LRC	16+	SOT-23
MMBT6427	9000	FSC	08+	SOT-23
MMBTA06-7-F	9000	DIODES	15+	SOT-23
MMBTA13LT1G	9000	ON	16+	SOT-23
MMBTA14	6000	FSC	05+	SOT23-3
MMBTA42LT1G	9000	LRC	15+	SOT-23
MMBZ5230BLT1G	18000	LRC	16+	SOT-23
MMBZ5234BLT1G	18000	ON	15+	SOT-23
MMBZ5248BLT1G	18000	LRC	16+	SOT-23
MMBZ5257BLT1G	18000	LRC	15+	SOT-23
MMBZ5V6ALT1G	18000	ON	10+	SOT-23
MMSZ2V4T1G	12000	ON	14+	SOD-123
MMSZ2V7T1G	9000	ON	16+	SOD-123
MMSZ4681T1G	12000	ON	15+	SOD-123
MMSZ4684T1G	12000	ON	15+	SOD-123
MMSZ4689T1G	9000	ON	16+	SOD-123
MMSZ5234B-7-F	12000	DIODES	12+	SOD-123
MMSZ5243BT1G	21000	LRC	15+	SOD-123
MMSZ5250BT1G	21000	ON	16+	SOD-123
MMSZ5254BT1G	9000	ON	14+	SOD-323
MMSZ5255B	9000	DIODES	16+	SOD-123
MMSZ6V2T1G	9000	ON	13+	SOD-123
MOC3022S-TA1	22000	LITEON	15+	SMD
MOC3023M	14343	FSC	16+	DIP-6
MOC3023SR2M	7397	FSC	16+	SOP-6
MOC3023S-TA1	30000	LITEON	14+	SMD-6
MOC3030	6391	FSC	14+	DIP-6

IRFB20N50KPbF SMPS MOSFET

HEXFET Power MOSFET

Applications

Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Lead-Free

Benefits

Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
Low R_DS(on)

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	20	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS@ 10V	12	A
I_DM	Pulsed Drain Current	80	A
P_D @T_C = 25°C	Power Dissipation	280	W
	Linear Derating Factor	2.2	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.9	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds (1.6mm from case )	300	°C
	Mounting Torque, 6-32 or M3 screw	10	N

IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

Tag:

mosfets irf3205,

multi emitter transistor,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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