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IRF3205PBF electrical ic rf power mosfet transistors Power Mosfet Transistor HEXFET Power MOSFET

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IRF3205PBF electrical ic rf power mosfet transistors Power Mosfet Transistor HEXFET Power MOSFET

: Large Image : IRF3205PBF electrical ic rf power mosfet transistors Power Mosfet Transistor HEXFET Power MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRF3205PBF

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8100pcs

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Detailed Product Description

Continuous Drain Current, VGS @ 10V:	80 A	Pulsed Drain Current:	390 A
Power Dissipation:	200 W	Linear Derating Factor:	1.3 W/°C
Gate-to-Source Voltage:	± 20 V
High Light:	npn smd transistor , silicon power transistors

IRF3205PbF

HEXFET® Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated Lead-Free

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF3205PBF electrical ic rf power mosfet transistors Power Mosfet Transistor HEXFET Power MOSFET

Absolute Maximum Ratings

	Parameter	Max.	Unit
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	110	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	80	A
I_DM	Pulsed Drain Current	390	A
P_D @T_C = 25°C	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
I_AR	Avalanche Current	62	A
E_AR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

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MFG

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Package

UPC451G2-E2-A	4827	NEC	15+	SOP-14
TLE2426CLPR	9732	TI	16+	TO-92
TPS2501DRCR	9827	TI	14+	QFN-10
UE06AB6	5242	ST	15+	QFP-64
TPS650250RHBR	8387	TI	16+	QFN32
TPS54527DDAR	4829	TI	15+	SOP-8
TLC549CP	4821	TI	14+	DIP-8
UC285TDKTTT-ADJ	4511	TI	15+	TO-263-5
TPS7333QDR	7261	TI	15+	SOP-8
TS912IDT	6372	ST	15+	SOP-8
TL431BQDBZRQ1	4193	TI	16+	SOT23-3
TDA6060XS	4120		15+	TSSOP28
TYN640RG	3948	ST	15+	TO-220
TCRT5000L	8000	VISHAY	15+	DIP-4
TMS320F28335ZJZA	229	TI	15+	BGA176
TOP256YN	6281	POWER	15+	TO-220
TLP185GB	38000	TOSHIBA	16+	SOP-4
TS4990IST	10000	ST	15+	MSOP-8
MAX3223CDBR	10650	TI	16+	SSOP
MMA8452QR1	4405	FREESCALE	12+	QFN
PESD2CAN	30000	NXP	15+	SOT