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BUK9507-30B Electronics Component Transistor Power Mosfet Transistor TrenchMOS logic level FET

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BUK9507-30B Electronics Component Transistor Power Mosfet Transistor TrenchMOS logic level FET

: Large Image : BUK9507-30B Electronics Component Transistor Power Mosfet Transistor TrenchMOS logic level FET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	BUK9507-30B

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7800pcs

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Detailed Product Description

Drain-source Voltage:	30 V	Drain-gate Voltage:	30 V
Gate-source Voltage:	±15 V	Peak Drain Current:	435 A
Total Power Dissipation:	157 W	Storage Temperature:	−55 To +175 °C
High Light:	npn smd transistor , multi emitter transistor

BUK95/9607-30B

TrenchMOS™ logic level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability:

BUK9507-30B in SOT78 (TO-220AB)

BUK9607-30B in SOT404 (D2-PAK).

Features

■ Low on-state resistance

■ Q101 compliant

■ 175 °C rated

■ Logic level compatible.

Applications

■ Automotive systems

■ 12 V loads

■ Motors, lamps and solenoids

■ General purpose power switching.

Quick reference data

■ E_DS(AL)S ≤ 327 mJ

■ R_DSon = 5.9 mΩ (typ)

■ I_D ≤ 75 A

■ P_tot ≤ 157 W.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions	Min	Max	Unit
V_DS	drain-source voltage (DC)		-	30	V
V_DGR	drain-gate voltage (DC)	R_GS = 20 kΩ	-	30	V
V_GS	gate-source voltage (DC)		-	±15	V
I_D	drain current (DC)	Tmb = 25 °C; VGS = 5 V; Figure 2 and 3	[1] -	108	A
		Tmb = 25 °C; VGS = 5 V; Figure 2 and 3	[2] -	75	A
		Tmb = 100 °C; VGS = 5 V; Figure 2	[1] -	75	A
I_DM	peak drain current	Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3	-	435	A
P_tot	total power dissipation	Tmb = 25 °C; Figure 1	-	157	W
T_stg	storage temperature		-55	+175	°C
T_j	junction temperature		-55	+175	°C

[1] Current is limited by power dissipation chip rating.

[2] Continuous current is limited by package.

BUK9507-30B Electronics Component Transistor Power Mosfet Transistor TrenchMOS logic level FET

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