Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage: | 800 V | Drain-gate Voltage: | 800 V |
|---|---|---|---|
| Gate- Source Voltage: | ± 30 V | Peak Diode Recovery Voltage Slope: | 4.5 V/ns |
| Operating Junction Temperature: | -55 To 150°C | Storage Temperature: | -55 To 150°C |
| High Light: | npn smd transistor,multi emitter transistor |
||
STP10NK80Z - STP10NK80ZFP
STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
| TYPE | VDSS | RDS(on) | ID | Pw |
STP10NK80Z STP10NK80ZFP STW10NK80Z | 800 V 800 V 800 V | < 0.90 Ω < 0.90 Ω < 0.90 Ω | 9 A 9 A 9 A | 160 W 40 W 160 W |
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
| STP10NK80Z | STP10NK80ZFP | STW10NK80Z | |||
| VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 800 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 9 | 9 (*) | 9 | A |
| ID | Drain Current (continuous) at TC = 100°C | 6 | 6 (*) | 6 | A |
| IDM (•) | Drain Current (pulsed) | 36 | 36 (*) | 36 | A |
| PTOT | Total Dissipation at TC = 25°C | 160 | 40 | 160 | W |
| Derating Factor | 1.28 | 0.32 | 1.28 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4 | KV | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -55 to 150 -55 to 150 | °C | ||
(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Stock Offer (Hot Sell)
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