Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage: | 500 V | Gate-source Voltage: | ± 30 V |
|---|---|---|---|
| Drain Current (continuous) At TC = 25 °C: | 11 A | Drain Current (pulsed): | 44 A |
| Peak Diode Recovery Voltage Slope: | 4.5 V/ns | Operating Junction Temperature: | -55 To 150 °C |
| High Light: | npn smd transistor,multi emitter transistor |
||
STF13NK50Z, STP13NK50Z, STW13NK50Z
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
Features
| Type | VDSS | RDS(on) max | ID | Pw |
| STF13NK50Z | 500 V | <0.48 Ω | 11 A | 30 W |
| STP13NK50Z | 500 V | <0.48 Ω | 11 A | 140 W |
| STW13NK50Z | 500 V | <0.48 Ω | 11 A | 140 W |
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| TO-220, TO-247 | TO-220FP | |||
| VDS | Drain-source voltage (VGS = 0) | 500 | V | |
| VGS | Gate-source voltage | ± 30 | V | |
| ID | Drain current (continuous) at TC = 25 °C | 11 | 11(1) | A |
| ID | Drain current (continuous) at TC=100 °C | 6.93 | 6.93(1) | A |
| IDM(2) | Drain current (pulsed) | 44 | 44(1) | A |
| PTOT | Total dissipation at TC = 25 °C | 140 | 30 | W |
| Derating factor | 1.12 | 0.24 | W/°C | |
| dv/dt(3) | Peak diode recovery voltage slope | 4.5 | V/ns | |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sin (t=1 s;TC= 25 °C) | 2500 | V | |
TJ Tstg | Operating junction temperature Storage temperature | -55 to 150 | °C | |
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS
Internal schematic diagram
Stock Offer (Hot Sell)
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