Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

China FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT supplier

Large Image :  FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & origianl
Model Number: FGA25N120ANTD

Payment & Shipping Terms:

Minimum Order Quantity: 10 pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 4800pcs
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Detailed Product Description
Collector-Emitter Voltage: 1200 V Gate-Emitter Voltage: ± 20 V
Pulsed Collector Current: 90 A Diode Maximum Forward Current: 150 A
Operating Junction Temperature: -55 To +150 °C Storage Temperature Range: -55 To +150 °C
High Light:

npn smd transistor

,

multi emitter transistor

 

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

 

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

 

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

 

FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

 

Absolute Maximum Ratings

Symbol Description FGA25N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 50 A
Collector Current @ TC = 100°C 25 A
ICM Pulsed Collector Current (Note 1) 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL

Maximum Lead Temp. for soldering Purposes,

1/8” from case for 5 seconds

300 °C

 

 

Mechanical Dimensions

 

                                                           TO-3PN

FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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