Home Products Power Mosfet Transistor

General Purpose Power Mosfet Transistor ( NPN Silicon ) Pb−Free Packages MMBT3904LT1G

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

General Purpose Power Mosfet Transistor ( NPN Silicon ) Pb−Free Packages MMBT3904LT1G

: Large Image : General Purpose Power Mosfet Transistor ( NPN Silicon ) Pb−Free Packages MMBT3904LT1G

Product Details:

Place of Origin:	Original
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	MMBT3904LT1G

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

Contact Now

Detailed Product Description

Collector−Emitter Voltage:	40 Vdc	Collector−Base Voltage:	60 Vdc
Emitter−Base Voltage:	6.0 Vdc	Collector Current − Continuous:	200 MAdc
Junction And Storage Temperature:	−55 To +150 °C
High Light:	power mosfet ic , multi emitter transistor

General Purpose Transistor

NPN Silicon

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector−Emitter Voltage	V_CEO	40	Vdc
Collector−Base Voltage	V_CBO	60	Vdc
Emitter−Base Voltage	V_EBO	6.0	Vdc
Collector Current − Continuous	I_C	200	mAdc

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C	P_D	225 1.8	mW mW/°C
Thermal Resistance, Junction−to−Ambient	R_JA	556	°C/W
Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C	P_D	300 2.4	mW mW/°C
Thermal Resistance, Junction−to−Ambient	R_JA	417	°C/W
Junction and Storage Temperature	T_J, T_stg	−55 to +150	°C

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. F

General Purpose Power Mosfet Transistor ( NPN Silicon ) Pb−Free Packages MMBT3904LT1G

Tag:

mosfets irf3205,

power mosfet ic,

multi emitter transistor

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Other Products

MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

VEB: 5.0Vdc
IB: 2.0Adc
TJ: −65 to +150 °C
Tstg: −65 to +150 °C

1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode

Non-Repetitive Peak Reverse Voltage: 100 V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage: 75V
RMS Reverse Voltage: 53V
Thermal Resistance, Junction to Ambient Air (Note 1): 300 K/W

1.5KE7.5CA 1500W Axial Lead Transient Voltage uppressors - 6.8V-440V high voltage

Peak power dissipation: 1500W
Steady state power dissipation: 6.5W
Peak forward surge current: 200A
Maximum instantaneours forward voltage: -55~+150℃

BTS134D Smart Low Side Power Switch electronic chip board

VDS: 42 V
Vbb(SC): 42V
VIN: -0.2 2) ... +10V
Tj: -40 ...+150 °C

TCMT4100 Optocoupler with Phototransistor Output general purpose mosfet

VR: 6V
Ptot: 250mW
Tstg: –40 to +100°C
Tsd: 235°C