Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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70CRU02 Ultrafast Rectifier, 2 x 35 A FRED PtTM high power mosfet transistors rf power mosfet transistors

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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70CRU02 Ultrafast Rectifier, 2 x 35 A FRED PtTM high power mosfet transistors rf power mosfet transistors

China 70CRU02   Ultrafast Rectifier, 2 x 35 A FRED PtTM  high power mosfet transistors rf power mosfet transistors supplier

Large Image :  70CRU02 Ultrafast Rectifier, 2 x 35 A FRED PtTM high power mosfet transistors rf power mosfet transistors

Product Details:

Place of Origin: brand new
Brand Name: VISHAY
Certification: Original Factory Pack
Model Number: 70CRU02

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5200PCS
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Detailed Product Description
IF(AV): 35 A VR: 200 V
IFSM: 300 A PD: 67 W
TJ, TStg: - 55 To 175 °C
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multi emitter transistor

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silicon power transistors

 


Ultrafast Rectifier, 2 x 35 A FRED PtTM


70CRU02   Ultrafast Rectifier, 2 x 35 A FRED PtTM  high power mosfet transistors rf power mosfet transistorsFEATURES

• Two common-cathode diodes

• Ultrafast reverse recovery

• Ultrafast reverse recovery current shape

• Low forward voltage drop

• Low leakage current

• Optimized for power conversion:

   welding and industrial SMPS applications

• Up to 175 °C operating junction temperature

• Designed and qualified for industrial level

 

DESCRIPTION

The 70CRU02 integrates two state of the art Vishay HPP ultrafast recovery rectifiers in the common-cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI.

 

ABSOLUTE MAXIMUM RATINGS

PARAMETER  SYMBOL  TEST CONDITIONS  MAX.  UNITS
Continuous forward current per diode IF(AV) TC = 145 °C 35 A
Cathode to anode voltage VR   200 V
Single pulse forward current per diode IFSM TC = 25 °C 300 A
Maximum power dissipation per module PD TC = 100 °C 67 W
Operating junction and storage temperatures TJ, TStg   - 55 to 175 °C

 

70CRU02   Ultrafast Rectifier, 2 x 35 A FRED PtTM  high power mosfet transistors rf power mosfet transistors

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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