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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

: Large Image : RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	RFP70N06

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8300pcs

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Detailed Product Description

Drain To Source Voltage:	60 V	Drain To Gate Voltage (RGS = 20kΩ):	60 V
Continuous Drain Current:	70 A	Gate To Source Voltage:	±20 V
Power Dissipation:	150 W	Linear Derating Factor:	1.0 W/℃
High Light:	multi emitter transistor , silicon power transistors

RFG70N06, RFP70N06, RF1S70N06SM

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49007.

Features

• 70A, 60V

• rDS(on) = 0.014Ω

• Temperature Compensated PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

PARAMETER	SYMBOL	RFG70N06, RFP70N06 RF1S70N06SM	UNITS
Drain to Source Voltage (Note 1)	V_DSS	60	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1)	V_DGR	60	V
Continuous Drain Current	I_D	70	A
Pulsed Drain Current (Note 3)	I_DM	Refer to Peak Current Curve
Gate to Source Voltage	V_GS	±20	V
Single Pulse Avalanche Rating	E_AS	Refer to UIS Curve	A
Power Dissipation	P_D	150	W
Linear Derating Factor		1.0	W/℃
Operating and Storage Temperature	T_J, T_STG	-55 to 175	℃
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334	T_L T_pkg	300 260	℃ ℃

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25oC to 150℃

Symbol

RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

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