Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsPower Mosfet Transistor

2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor

China 2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor supplier
2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor supplier 2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor supplier

Large Image :  2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: 2SC1815-GR

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 25000pcs
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Detailed Product Description
Collector-Emitter Breakdown Voltage: 50 Vdc Collector-Base Breakdown Voltage: 60 Vdc
Emitter-Base Breakdown Voltage: 5 Vdc Collector Cutoff Current: 0.1 UAdc
Emitter Cutoff Current: 0.1 UAdc Package: TO-92
High Light:

multi emitter transistor

,

silicon power transistors

 

2SC1815-O

2SC1815-Y

2SC1815-GR

2SC1815-BL

NPN Silicon Epitaxial Transistor

 

 

Features

• 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF,

  AF Amplifier and General Purpose Applications.

• Capable of 0.4Watts of Power Dissipation.

• Collector-current 0.15A

• Collector-base Voltage 60V

• Marking : C1815

• Epoxy meets UL 94 V-0 flammability rating

• Moisure Sensitivity Level 1

• Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information)

• Operating and storage junction temperature range:-55o C to +125o C

 

Electrical Characteristics @ 25℃ Unless Otherwise Specified

Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* (IC=0.1mAdc, IB=0) 50   Vdc
V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) 60   Vdc
V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc,IC=0) 5   Vdc
ICBO Collector Cutoff Current (VCB=60Vdc, IE=0Adc)   0.1 uAdc
ICEO Collector Cutoff Current (VCB=50Vdc, IE=0Adc)   0.1 uAdc
IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0Adc)   0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain* (IC=2.0mAdc, VCE=6.0Vdc) 70 700  
VCE(sat) Collector-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc)   0.25 Vdc
VBE(sat) Base-Emitter Saturation Voltage (IC=100mAdc, IB=10mAdc)   1.0 Vdc
VBE Base-Emitter Voltage (IE=310mAdc) -- 1.45 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency (IC=1.0mAdc, VCE=10Vdc, f=30MHz) 80   MHz

 

2SC1815-GR Power Mosfet Module Transistor NPN Silicon Epitaxial Transistor

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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