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multi emitter transistor

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2SD667 Silicon NPN Epitaxial Transistor , Electronics Component Transistor
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2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage ... Read More

2017-12-07 11:10:17

2SB1151-Y Low Collector Saturation Voltage Large Current High Power Mosfet Transistors
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2SB1151-Y LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER ... Read More

2017-12-07 11:10:26

ST13007A High Voltage Fast-Switching Npn Power Transistor Switching Power Mosfet
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ST13007A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR switching power mosfet IMPROVED SPECIFICATION: - LOWER LEAKAGECURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE ... Read More

2017-12-07 11:10:33

BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors
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BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum ... Read More

2017-12-07 11:10:53

2SD5011 Power Mosfet Transistor isc Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output ... Read More

2017-12-07 11:10:54

PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER
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PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ABSOLUTE MAXIMUM RATING (TA=25C, ... Read More

2017-12-07 11:32:54

Tlp627-4 Programmable Controllers Dc-Output Module Telecommunication Transistor Equivalent
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TLP627-4 PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION Transistor Equivalent The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington ... Read More

2017-12-07 11:32:48

General Purpose Power Mosfet Transistor ( NPN Silicon ) Pb−Free Packages MMBT3904LT1G
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General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current ... Read More

2017-12-07 11:09:22

PNP Silicon Amplifier Transistor 625mW BC557A
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Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 150o C Junction Temperature Through Hole Package Epoxy meets UL 94 V-0 flammability rating Moisure ... Read More

2017-12-07 11:09:22

FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features NPT Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25C Low switching loss: ... Read More

2017-12-07 11:09:28

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